s mhop microelectronics c orp. a symbolv ds v gs i dm a i d units parameter 100 vv 20 gate-source voltage drain-source voltage features super high dense cell design for low r ds(on) . rugged and reliable. n-channel logic level enhancement mode field effect transi stor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.0 www.samhop.com.tw oct,08,2010 1 details are subject to change without notice. t c =25 c w p d c -55 to 175 t c =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a 4 4 21 3.4 STM201N green product 3.5 2.4 product summary v dss i d r ds(on) (m ) typ 100v 4a 170 @ vgs=4.5v 110 @ vgs=10v suface mount package. s o-8 1 44 c/w thermal characteristics thermal resistance, junction-to-ambient r ja a
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 110 m ohm v gs =10v , i d =2a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics 140 STM201N ver 1.0 www.samhop.com.tw oct,08,2010 2 1 1.8 3 g fs s c iss 480 pf c oss 47 pf c rss 29 pf q g 9.8 nc 10.2 18 8.5 t d(on) 7.8 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =2a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance c f=1.0mhz c v sd nc q gs nc q gd 1.3 2.9 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =2a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.775 1.3 v notes v ds =50v,i d =2a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 5 v gs =4.5v , i d =1a m ohm 170 245
STM201N ver 1.0 www.samhop.com.tw oct,08,2010 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 15 12 9 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 10 8 6 4 2 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 240 200 160 120 80 40 1 3 6 9 15 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =10v i d =2a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 3 v g s =10v 12 1 v gs =5v v gs =6v v gs =7v v gs =8v
STM201N ver 1.0 www.samhop.com.tw oct,08,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 10 1 0.1 80 v gs =10v single pulse t a =25 c r d s (o n) l imi t 420 350 280 210 140 70 0 2 4 6 8 10 0 125 c 75 c 25 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c ciss coss crss 900 750 600 450 300 150 0 10 15 20 25 30 0 5 i d =2a 10 86 4 2 0 0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 v ds =50v i d =2a 1 10 100 1 10 100 300 vds=50v,id=1a vgs=10v td(on) tr td(off ) tf dc 10 m s 1 ms 1 00us
t p v ( br )d ss i a s figure 13b. STM201N ver 1.0 www.samhop.com.tw oct,08,2010 5 unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v 0.001 0.01 0.1 1 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve
STM201N ver1.0 www.samhop.com.tw oct,08,2010 6 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45
STM201N www.samhop.com.tw oct,08,2010 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 ver1.0
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